Design of a Wideband Doherty Power Amplifier with High Efficiency for 5G Application

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis output matching network is presented, focusing on impact non-ideally infinite impedance auxiliary in back off, due to device’s parasitic elements. By properly accounting this effect, designed was able follow desired trajectories across 2.8 GHz 3.6 range (fractional bandwidth = 25%), with good trade-off between efficiency and bandwidth. The two 10 W packaged GaN HEMTs. measurement results showed that it provided 43 dBm 44.2 saturated 8 dB 13.5 linear gain over entire band. achieved drain 62% 76.5% at saturation 44% 56% 6 back-off.